The Effect of Negative VTH of NAND Flash Memory Cells on Data Retention Characteristics

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Veröffentlicht in:	IEEE electron device letters 2009, Vol.30 (2), p.155-157
Hauptverfasser:	PARK, Mincheol, AHN, Eungjin, CHO, Eunsuk, KIM, Keonsoo, LEE, Won-Seong
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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