Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self aligned contact etch
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| Veröffentlicht in: | Japanese journal of applied physics 1997, Vol.36 (9A), p.5498-5501 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 5501 |
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| container_issue | 9A |
| container_start_page | 5498 |
| container_title | Japanese journal of applied physics |
| container_volume | 36 |
| creator | IIJIMA, Y ISHIKAWA, Y YANG, C.-I CHANG, M OKANO, H |
| description | |
| doi_str_mv | 10.1143/JJAP.36.5498 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese journal of applied physics, 1997, Vol.36 (9A), p.5498-5501 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_2105024 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self aligned contact etch |
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