Electrical Characteristics and Thermal Stability of HfxTaySizN Metal Gate Electrode for Advanced MOS Devices

Electrical Characteristics and Thermal Stability of HfxTaySizN Metal Gate Electrode for Advanced MOS Devices

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Veröffentlicht in:IEEE transactions on electron devices 2008-11, Vol.55 (11), p.3259-3266
Hauptverfasser: YANG, Chang-Ta, CHANG-LIAO, Kuei-Shu, CHANG, Hsin-Chun, FU, Chung-Hao, WANG, Tien-Ko, TSAI, Wen-Fa, AI, Chi-Fong, WU, Wen-Fa
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Sprache:eng
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Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_issue 11
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container_title IEEE transactions on electron devices
container_volume 55
creator YANG, Chang-Ta
CHANG-LIAO, Kuei-Shu
CHANG, Hsin-Chun
FU, Chung-Hao
WANG, Tien-Ko
TSAI, Wen-Fa
AI, Chi-Fong
WU, Wen-Fa
description
doi_str_mv 10.1109/TED.2008.2005128
format Article
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Electrical Characteristics and Thermal Stability of HfxTaySizN Metal Gate Electrode for Advanced MOS Devices
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