Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

The spatial spread of interface states generated by hot-electron effect in the nMOSFET is shown to be significantly increased by self-heating. Substantial generation of interface states in the channel region of the wide-channel strained-Si/SiGe nMOSFET, which suffers from significant self-heating, i...

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Veröffentlicht in:IEEE electron device letters 2008-08, Vol.29 (8), p.934-937
Hauptverfasser: Ang, D.S., Phua, T.W.H., Ling, C.H.
Format: Artikel
Sprache:eng
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Zusammenfassung:The spatial spread of interface states generated by hot-electron effect in the nMOSFET is shown to be significantly increased by self-heating. Substantial generation of interface states in the channel region of the wide-channel strained-Si/SiGe nMOSFET, which suffers from significant self-heating, is observed at a very short stress time. The initial spread of the interface damage is significantly reduced in the narrow-channel strained-Si device, which exhibits a much lesser degree of self-heating. Evidence suggests that the increased spread in the spatial distribution of the interface damage is due to a small fraction of excess ldquosuperhotrdquo electrons, which have gained additional energy from phonon absorption.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2000966