Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors
Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up...
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| Veröffentlicht in: | IEEE electron device letters 2008-07, Vol.29 (7), p.808-810 |
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| container_title | IEEE electron device letters |
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| creator | Tsung-Yang Liow Kian-Ming Tan Lee, R.T.P. Ming Zhu Tan, B.L.-H. Balasubramanian, N. Yee-Chia Yeo |
| description | Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% I Dsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement. |
| doi_str_mv | 10.1109/LED.2008.2000669 |
| format | Article |
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This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% I Dsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2000669</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitive sensors ; Channels ; Compliance ; Compressive stress ; Drains ; Electronics ; Epitaxial growth ; Etching ; Exact sciences and technology ; FETs ; FinFET ; Germanium ; Germanium silicon alloys ; Lattices ; Microelectronics ; multiple-gate transistor (MuGFET) ; Nanocomposites ; Nanomaterials ; Nanowires ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon germanium ; strain ; stress ; Substrates ; Transistors</subject><ispartof>IEEE electron device letters, 2008-07, Vol.29 (7), p.808-810</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-64a5b67e4133a6a1d985f40fdb44f78e458750c9e4ff02d803e047127b2d48dd3</citedby><cites>FETCH-LOGICAL-c384t-64a5b67e4133a6a1d985f40fdb44f78e458750c9e4ff02d803e047127b2d48dd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4558104$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4558104$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20474691$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tsung-Yang Liow</creatorcontrib><creatorcontrib>Kian-Ming Tan</creatorcontrib><creatorcontrib>Lee, R.T.P.</creatorcontrib><creatorcontrib>Ming Zhu</creatorcontrib><creatorcontrib>Tan, B.L.-H.</creatorcontrib><creatorcontrib>Balasubramanian, N.</creatorcontrib><creatorcontrib>Yee-Chia Yeo</creatorcontrib><title>Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% I Dsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement.</description><subject>Applied sciences</subject><subject>Capacitive sensors</subject><subject>Channels</subject><subject>Compliance</subject><subject>Compressive stress</subject><subject>Drains</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>FinFET</subject><subject>Germanium</subject><subject>Germanium silicon alloys</subject><subject>Lattices</subject><subject>Microelectronics</subject><subject>multiple-gate transistor (MuGFET)</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanowires</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon germanium</subject><subject>strain</subject><subject>stress</subject><subject>Substrates</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1rGzEQhkVJoY7be6GXpZDQyzqj1WilPaax8wEmPSQ-FiGvRlRmvZtKa0r-feTa5JBDLjOHed6BmYexrxxmnENzsVzMZxWA3heo6-YDm3ApdQmyFidsAgp5KTjUn9hpShsAjqhwwn7fUNzaPuy2xcOwiy0VtnfFPNrQFw9jpJSGmAo_xGLVjdGOf0Jf_hzc83_s3vbDvxCpuA7UuXLhPbVj8Rhtn0Iac_Az--htl-jLsU_Z6nrxeHVbLn_d3F1dLstWaBzLGq1c14qQC2Fry12jpUfwbo3olSaUWkloG0LvoXIaBAEqXql15VA7J6bs_LD3KQ5_d5RGsw2ppa6zPQ27ZARKACUggz_eBblSIKTm2GT0-xt0kx_U5zNMw6sqg1JkCA5QG4eUInnzFMPWxmfDwey9mOzF7L2Yo5ccOTvutam1nc_fakN6zVX5MqwbnrlvBy4Q0esYs1MOKF4AYnCUiQ</recordid><startdate>20080701</startdate><enddate>20080701</enddate><creator>Tsung-Yang Liow</creator><creator>Kian-Ming Tan</creator><creator>Lee, R.T.P.</creator><creator>Ming Zhu</creator><creator>Tan, B.L.-H.</creator><creator>Balasubramanian, N.</creator><creator>Yee-Chia Yeo</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Silicon germanium</topic><topic>strain</topic><topic>stress</topic><topic>Substrates</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsung-Yang Liow</creatorcontrib><creatorcontrib>Kian-Ming Tan</creatorcontrib><creatorcontrib>Lee, R.T.P.</creatorcontrib><creatorcontrib>Ming Zhu</creatorcontrib><creatorcontrib>Tan, B.L.-H.</creatorcontrib><creatorcontrib>Balasubramanian, N.</creatorcontrib><creatorcontrib>Yee-Chia Yeo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsung-Yang Liow</au><au>Kian-Ming Tan</au><au>Lee, R.T.P.</au><au>Ming Zhu</au><au>Tan, B.L.-H.</au><au>Balasubramanian, N.</au><au>Yee-Chia Yeo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-07-01</date><risdate>2008</risdate><volume>29</volume><issue>7</issue><spage>808</spage><epage>810</epage><pages>808-810</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% I Dsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2008.2000669</doi><tpages>3</tpages></addata></record> |
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| issn | 0741-3106 1558-0563 |
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| subjects | Applied sciences Capacitive sensors Channels Compliance Compressive stress Drains Electronics Epitaxial growth Etching Exact sciences and technology FETs FinFET Germanium Germanium silicon alloys Lattices Microelectronics multiple-gate transistor (MuGFET) Nanocomposites Nanomaterials Nanowires Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium strain stress Substrates Transistors |
| title | Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors |
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