Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up...

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Veröffentlicht in:	IEEE electron device letters 2008-07, Vol.29 (7), p.808-810
Hauptverfasser:	Tsung-Yang Liow, Kian-Ming Tan, Lee, R.T.P., Ming Zhu, Tan, B.L.-H., Balasubramanian, N., Yee-Chia Yeo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitive sensors Channels Compliance Compressive stress Drains Electronics Epitaxial growth Etching Exact sciences and technology FETs FinFET Germanium Germanium silicon alloys Lattices Microelectronics multiple-gate transistor (MuGFET) Nanocomposites Nanomaterials Nanowires Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium strain stress Substrates Transistors
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Zusammenfassung:	Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% I Dsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2008.2000669