Encapsulated tapered active layer 1.3 μm Fabry-Perot laser operating at high temperature

High temperature operation at 1.3 μm Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that the components are fully compatible with non-sealed low-cost packaging.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Lestra, A, Aubert, P, Colson, V, Gentner, J.L, Grard, E, Lafragette, J.L, Le Gouezigou, L, Pinquier, A, Roux, L, Toullier, D, Tregoat, D, Fernier, B
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Design of specific laser systems Efficiency, stability, gain, and other operational parameters Exact sciences and technology Fundamental areas of phenomenology (including applications) High-temperature techniques and instrumentation pyrometry Laser optical systems: design and operation Lasers Lasing action in semiconductors Optical communication Optical communication devices Optics Optoelectronics manufacturing Packaging Physics Product packaging Semiconductor lasers Semiconductor lasers laser diodes Testing
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	High temperature operation at 1.3 μm Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that the components are fully compatible with non-sealed low-cost packaging.
ISSN:	0537-9989
DOI:	10.1049/cp:19971360