Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the V / G criterion

Using the FEMAG software, fully time-dependent and global simulations are conducted to predict the distribution of point defects in a growing silicon crystal. Furthermore, the defect governing model is adapted in order to better agree with available measurements of self-interstitial and vacancy diffusion coefficients while respecting the V / G criterion. It is shown that introducing a thermal drift effect can facilitate the construction of a relevant model satisfying both conditions.