An Improved Bidirectional SCR Structure for Low-Triggering ESD Protection Applications
An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized in a 0.6-mum bipolar complementary metal-oxide-semiconductor process. The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage...
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| Veröffentlicht in: | IEEE electron device letters 2008-04, Vol.29 (4), p.360-362 |
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| container_end_page | 362 |
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| container_issue | 4 |
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| container_title | IEEE electron device letters |
| container_volume | 29 |
| creator | Zhiwei Liu Vinson, J. Lifang Lou Liou, J.J. |
| description | An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized in a 0.6-mum bipolar complementary metal-oxide-semiconductor process. The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage. |
| doi_str_mv | 10.1109/LED.2008.917111 |
| format | Article |
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The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.917111</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bidirectional ; Bidirectional electrostatic discharge (ESD) protection ; Clamps ; Computer science ; Design. Technologies. Operation analysis. Testing ; Devices ; Electric potential ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Electrostatic discharge ; Electrostatic discharges ; Exact sciences and technology ; Grounds ; holding voltage ; Integrated circuits ; latch-up immunity ; Leakage current ; Pins ; Protection ; Rectifiers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stress ; Thyristors ; triggering voltage ; Voltage</subject><ispartof>IEEE electron device letters, 2008-04, Vol.29 (4), p.360-362</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage.</description><subject>Applied sciences</subject><subject>Bidirectional</subject><subject>Bidirectional electrostatic discharge (ESD) protection</subject><subject>Clamps</subject><subject>Computer science</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Electrostatic discharge</subject><subject>Electrostatic discharges</subject><subject>Exact sciences and technology</subject><subject>Grounds</subject><subject>holding voltage</subject><subject>Integrated circuits</subject><subject>latch-up immunity</subject><subject>Leakage current</subject><subject>Pins</subject><subject>Protection</subject><subject>Rectifiers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stress</subject><subject>Thyristors</subject><subject>triggering voltage</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1PGzEQxa0KpAbouYderEqU04YZf-8xhPAhRWrV0F6tjeONjDa7qb1LxX-Po0UcOHCakeb3Zuz3CPmKMEWE8nK5uJ4yADMtUSPiJzJBKU0BUvEjMgEtsOAI6jM5SekRAIXQYkL-zlp6v9vH7slv6FXYhOhdH7q2auhq_puu-ji4foie1l2ky-5_8RDDdutjaLd0sbqmv2LXjwo62--b4KpDn87IcV01yX95rafkz83iYX5XLH_e3s9ny8Ll833BVCkVY2XtjVqv_cZwXCNIyTel9Ip5KThqY5h2gLUXfK2MqpUQ4JSrQRt-Si7GvfkH_wafersLyfmmqVrfDckaLUGUKDCTPz4kuZDZKq0z-P0d-NgNMRuSbImMCQ6cZehyhFzsUoq-tvsYdlV8tgj2EIfNcdhDHHaMIyvOX9dWyVVNHavWhfQmY4AlAyMz923kgvf-bSyyXYfHvQDtCJBZ</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Zhiwei Liu</creator><creator>Vinson, J.</creator><creator>Lifang Lou</creator><creator>Liou, J.J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Testing</topic><topic>Devices</topic><topic>Electric potential</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Electrostatic discharge</topic><topic>Electrostatic discharges</topic><topic>Exact sciences and technology</topic><topic>Grounds</topic><topic>holding voltage</topic><topic>Integrated circuits</topic><topic>latch-up immunity</topic><topic>Leakage current</topic><topic>Pins</topic><topic>Protection</topic><topic>Rectifiers</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stress</topic><topic>Thyristors</topic><topic>triggering voltage</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhiwei Liu</creatorcontrib><creatorcontrib>Vinson, J.</creatorcontrib><creatorcontrib>Lifang Lou</creatorcontrib><creatorcontrib>Liou, J.J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhiwei Liu</au><au>Vinson, J.</au><au>Lifang Lou</au><au>Liou, J.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An Improved Bidirectional SCR Structure for Low-Triggering ESD Protection Applications</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-04-01</date><risdate>2008</risdate><volume>29</volume><issue>4</issue><spage>360</spage><epage>362</epage><pages>360-362</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized in a 0.6-mum bipolar complementary metal-oxide-semiconductor process. The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2008.917111</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2008-04, Vol.29 (4), p.360-362 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_20192085 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bidirectional Bidirectional electrostatic discharge (ESD) protection Clamps Computer science Design. Technologies. Operation analysis. Testing Devices Electric potential Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Electrostatic discharge Electrostatic discharges Exact sciences and technology Grounds holding voltage Integrated circuits latch-up immunity Leakage current Pins Protection Rectifiers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Thyristors triggering voltage Voltage |
| title | An Improved Bidirectional SCR Structure for Low-Triggering ESD Protection Applications |
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