A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond

A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe-source/drain (S/D) is developed with careful optimization of recessed SiGe-S/D structure. With this method, hole mobility, short channel effect and S/D resistance in pMOSFET are improved compared with conventional...

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Veröffentlicht in:	Solid-state electronics 2007-11, Vol.51 (11), p.1437-1443
Hauptverfasser:	Yasutake, Nobuaki, Azuma, Atsushi, Ishida, Tatsuya, Ohuchi, Kazuya, Aoki, Nobutoshi, Kusunoki, Naoki, Mori, Shinji, Mizushima, Ichiro, Morooka, Tetsu, Kawanaka, Shigeru, Toyoshima, Yoshiaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Mobility MOSFET Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe-S/D Strain Transistors
Online-Zugang:	Volltext
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