2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer

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Veröffentlicht in:	Electronics letters 2007-11, Vol.43 (23), p.1306-1308
Hauptverfasser:	FUKANO, H, SATO, T, MITSUHARA, M, KONDO, Y, YASAKA, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Electronics Exact sciences and technology Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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