RF plasma modification of heavily destroyed ion implanted subsurface silicon layers

A rf plasma treatment of implanted SiO2/Si structures leads to significantly different results in the case of partly amorphised and fully amorphised silicon layers. In the case of partly amorphised layer crystallization, ordering of amorphous clusters and rise in electrical activity of implants is observed, while a suppression of broken bond concentration, and no regrowth of crystalline structure is determined for fully a morphised layers. [Russian text Ignored]