A novel 0.5-μm n+-p+ poly-gated salicide CMOS process using germanium implantation

A novel 0.5-μm n+-p+ poly-gated salicide CMOS process using germanium implantation

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Veröffentlicht in:IEEE transactions on electron devices 1989-11, Vol.36 (11), p.2422-2432
Hauptverfasser: PFIESTER, J. R, YEARGAIN, J. R, SWENSON, M. S, ALVIS, J. R
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 2432
container_issue 11
container_start_page 2422
container_title IEEE transactions on electron devices
container_volume 36
creator PFIESTER, J. R
YEARGAIN, J. R
SWENSON, M. S
ALVIS, J. R
description
doi_str_mv 10.1109/16.43662
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ispartof IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2422-2432
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1557-9646
language eng
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title A novel 0.5-μm n+-p+ poly-gated salicide CMOS process using germanium implantation
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