High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base

Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Var...

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Veröffentlicht in:	IEEE electron device letters 1991-06, Vol.12 (6), p.347-349
Hauptverfasser:	Wang, G.-W., Pierson, R.L., Asbeck, P.M., Wang, K.-C., Wang, N.-L., Nubling, R., Chang, M.F., Salerno, J., Sastry, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Carbon dioxide Chemical vapor deposition Cutoff frequency Doping Electronics Exact sciences and technology Gallium arsenide Heterojunction bipolar transistors Microwave circuits MOCVD Molecular beam epitaxial growth Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Zinc
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