High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base

Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Var...

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Veröffentlicht in:	IEEE electron device letters 1991-06, Vol.12 (6), p.347-349
Hauptverfasser:	Wang, G.-W., Pierson, R.L., Asbeck, P.M., Wang, K.-C., Wang, N.-L., Nubling, R., Chang, M.F., Salerno, J., Sastry, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Carbon dioxide Chemical vapor deposition Cutoff frequency Doping Electronics Exact sciences and technology Gallium arsenide Heterojunction bipolar transistors Microwave circuits MOCVD Molecular beam epitaxial growth Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Zinc
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Beschreibung
Zusammenfassung:	Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.82083