High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base
Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Var...
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| Veröffentlicht in: | IEEE electron device letters 1991-06, Vol.12 (6), p.347-349 |
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| container_end_page | 349 |
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| container_issue | 6 |
| container_start_page | 347 |
| container_title | IEEE electron device letters |
| container_volume | 12 |
| creator | Wang, G.-W. Pierson, R.L. Asbeck, P.M. Wang, K.-C. Wang, N.-L. Nubling, R. Chang, M.F. Salerno, J. Sastry, S. |
| description | Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.< > |
| doi_str_mv | 10.1109/55.82083 |
| format | Article |
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These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.82083</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Carbon dioxide ; Chemical vapor deposition ; Cutoff frequency ; Doping ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Heterojunction bipolar transistors ; Microwave circuits ; MOCVD ; Molecular beam epitaxial growth ; Semiconductor electronics. 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These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.< ></description><subject>Applied sciences</subject><subject>Carbon dioxide</subject><subject>Chemical vapor deposition</subject><subject>Cutoff frequency</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>Microwave circuits</subject><subject>MOCVD</subject><subject>Molecular beam epitaxial growth</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><subject>Zinc</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqN0TtPwzAUBWALgUQpSKxsWUAsoddve6zKUwJ1AdbIcZzWVRoHO1XFv6elCEa62IM_H13dg9A5hhuMQY84v1EEFD1AA8y5yoELeogGIBnOKQZxjE5SWgBgxiQboPLRz-Z552Id4tK01mUv08n7bT6LYd1m4-bBjNNoe2Rz17sYFqvW9j60Wem70JiY9dG0yac-xJStfT_PrIllaPMqdK7KSpPcKTqqTZPc2c89RG_3d6-Tx_x5-vA0GT_nlhHV58I6UUFNVC1ZKWUN2EkLWGvNSyFxRYwiRAkrSsNYWWOOgcLmQyVlJSuO6RBd7XK7GD5WLvXF0ifrmsa0LqxSQZTGVDO6B5SbbSm9B6QgBYf_IdOCKsn2gkSS7YzXO2hjSCm6uuiiX5r4WWAotkUXnBffRW_o5U-mSdY09aYQ69Of1xIYldshL3bOO-d-n3cZX2l0rkk</recordid><startdate>19910601</startdate><enddate>19910601</enddate><creator>Wang, G.-W.</creator><creator>Pierson, R.L.</creator><creator>Asbeck, P.M.</creator><creator>Wang, K.-C.</creator><creator>Wang, N.-L.</creator><creator>Nubling, R.</creator><creator>Chang, M.F.</creator><creator>Salerno, J.</creator><creator>Sastry, S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19910601</creationdate><title>High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base</title><author>Wang, G.-W. ; Pierson, R.L. ; Asbeck, P.M. ; Wang, K.-C. ; Wang, N.-L. ; Nubling, R. ; Chang, M.F. ; Salerno, J. ; Sastry, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-6ce6d0f28f74b77f01e7c019995b671d2a82286c6ba44bf151030d0fd77d7d513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Applied sciences</topic><topic>Carbon dioxide</topic><topic>Chemical vapor deposition</topic><topic>Cutoff frequency</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>Microwave circuits</topic><topic>MOCVD</topic><topic>Molecular beam epitaxial growth</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, G.-W.</creatorcontrib><creatorcontrib>Pierson, R.L.</creatorcontrib><creatorcontrib>Asbeck, P.M.</creatorcontrib><creatorcontrib>Wang, K.-C.</creatorcontrib><creatorcontrib>Wang, N.-L.</creatorcontrib><creatorcontrib>Nubling, R.</creatorcontrib><creatorcontrib>Chang, M.F.</creatorcontrib><creatorcontrib>Salerno, J.</creatorcontrib><creatorcontrib>Sastry, S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, G.-W.</au><au>Pierson, R.L.</au><au>Asbeck, P.M.</au><au>Wang, K.-C.</au><au>Wang, N.-L.</au><au>Nubling, R.</au><au>Chang, M.F.</au><au>Salerno, J.</au><au>Sastry, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1991-06-01</date><risdate>1991</risdate><volume>12</volume><issue>6</issue><spage>347</spage><epage>349</epage><pages>347-349</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.82083</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1991-06, Vol.12 (6), p.347-349 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_19704370 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Carbon dioxide Chemical vapor deposition Cutoff frequency Doping Electronics Exact sciences and technology Gallium arsenide Heterojunction bipolar transistors Microwave circuits MOCVD Molecular beam epitaxial growth Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Zinc |
| title | High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base |
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