Far-infrared photoconductivity spectroscopy of high-mobility n-GaAs grown by MBE
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Veröffentlicht in: | Semiconductor science and technology 1989-07, Vol.4 (7), p.548-552 |
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container_issue | 7 |
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container_title | Semiconductor science and technology |
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creator | Grimes, R T Stanaway, M B Chamberlain, J M Henini, M Hughes, O H |
description | |
doi_str_mv | 10.1088/0268-1242/4/7/009 |
format | Article |
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ispartof | Semiconductor science and technology, 1989-07, Vol.4 (7), p.548-552 |
issn | 0268-1242 1361-6641 |
language | eng |
recordid | cdi_pascalfrancis_primary_19446584 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Photoconduction and photovoltaic effects photodielectric effects Physics |
title | Far-infrared photoconductivity spectroscopy of high-mobility n-GaAs grown by MBE |
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