High stable microwave performance of InP/InGaAs HIGFET's
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Veröffentlicht in: | IEEE transactions on electron devices 1990, Vol.37 (8), p.1916-1917 |
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container_end_page | 1917 |
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container_issue | 8 |
container_start_page | 1916 |
container_title | IEEE transactions on electron devices |
container_volume | 37 |
creator | MARTIN, E. A AINA, O. A ILIADIS, A. A MATTINGLY, M. R HEMPFLING, E |
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format | Article |
fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_19397554</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>19397554</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_193975543</originalsourceid><addsrcrecordid>eNpjYuA0NDU117U0MzFjYeA0MDC00LU0tjDmYOAqLs4Ccs1MTIw4GSw8MtMzFIpLEpNyUhVyM5OL8ssTy1IVClKL0vKLchPzklMV8tMUPPMC9D3z3BMdixU8PN3dXEPUi3kYWNMSc4pTeaE0N4MqUNzZQ7cgsTg5MSetCKg3szi-oCgzN7GoMt7Q0tjS3NTUxJhYdQCSzjgG</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High stable microwave performance of InP/InGaAs HIGFET's</title><source>IEEE Electronic Library (IEL)</source><creator>MARTIN, E. A ; AINA, O. A ; ILIADIS, A. A ; MATTINGLY, M. R ; HEMPFLING, E</creator><creatorcontrib>MARTIN, E. A ; AINA, O. A ; ILIADIS, A. A ; MATTINGLY, M. R ; HEMPFLING, E</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE transactions on electron devices, 1990, Vol.37 (8), p.1916-1917</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19397554$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MARTIN, E. A</creatorcontrib><creatorcontrib>AINA, O. A</creatorcontrib><creatorcontrib>ILIADIS, A. A</creatorcontrib><creatorcontrib>MATTINGLY, M. R</creatorcontrib><creatorcontrib>HEMPFLING, E</creatorcontrib><title>High stable microwave performance of InP/InGaAs HIGFET's</title><title>IEEE transactions on electron devices</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpjYuA0NDU117U0MzFjYeA0MDC00LU0tjDmYOAqLs4Ccs1MTIw4GSw8MtMzFIpLEpNyUhVyM5OL8ssTy1IVClKL0vKLchPzklMV8tMUPPMC9D3z3BMdixU8PN3dXEPUi3kYWNMSc4pTeaE0N4MqUNzZQ7cgsTg5MSetCKg3szi-oCgzN7GoMt7Q0tjS3NTUxJhYdQCSzjgG</recordid><startdate>1990</startdate><enddate>1990</enddate><creator>MARTIN, E. A</creator><creator>AINA, O. A</creator><creator>ILIADIS, A. A</creator><creator>MATTINGLY, M. R</creator><creator>HEMPFLING, E</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>1990</creationdate><title>High stable microwave performance of InP/InGaAs HIGFET's</title><author>MARTIN, E. A ; AINA, O. A ; ILIADIS, A. A ; MATTINGLY, M. R ; HEMPFLING, E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_193975543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MARTIN, E. A</creatorcontrib><creatorcontrib>AINA, O. A</creatorcontrib><creatorcontrib>ILIADIS, A. A</creatorcontrib><creatorcontrib>MATTINGLY, M. R</creatorcontrib><creatorcontrib>HEMPFLING, E</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MARTIN, E. A</au><au>AINA, O. A</au><au>ILIADIS, A. A</au><au>MATTINGLY, M. R</au><au>HEMPFLING, E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High stable microwave performance of InP/InGaAs HIGFET's</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>1990</date><risdate>1990</risdate><volume>37</volume><issue>8</issue><spage>1916</spage><epage>1917</epage><pages>1916-1917</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0018-9383 |
ispartof | IEEE transactions on electron devices, 1990, Vol.37 (8), p.1916-1917 |
issn | 0018-9383 1557-9646 |
language | eng |
recordid | cdi_pascalfrancis_primary_19397554 |
source | IEEE Electronic Library (IEL) |
subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
title | High stable microwave performance of InP/InGaAs HIGFET's |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T02%3A49%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20stable%20microwave%20performance%20of%20InP/InGaAs%20HIGFET's&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=MARTIN,%20E.%20A&rft.date=1990&rft.volume=37&rft.issue=8&rft.spage=1916&rft.epage=1917&rft.pages=1916-1917&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E19397554%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |