Switching characteristics of certain sputtered thin films

Switching characteristics of certain sputtered thin films

Sputtered thin films with compositions consisting of Co/sub 75/NI/sub 25/, (Co/sub 75/Ni/sub 25/)/sub 90/Mo/sub 10/, and (Co/sub 75/Ni/sub 25/)/sub 90/Ta/sub 10/ atomic percent were evaluated relative to their magnetic properties as a function of thickness. The maximum coercive force at the optimum...

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Veröffentlicht in:IEEE transactions on magnetics 1990-09, Vol.26 (5), p.1626-1628
Hauptverfasser: Fisher, R.D., Khan, M.R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Coercive force
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Magnetic field measurement
Magnetic films
Magnetic hysteresis
Magnetic properties
Magnetic properties and materials
Magnetization reversal
Metals. Metallurgy
Physics
Saturation magnetization
Sputtering
Substrates
Transistors
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Zusammenfassung:Sputtered thin films with compositions consisting of Co/sub 75/NI/sub 25/, (Co/sub 75/Ni/sub 25/)/sub 90/Mo/sub 10/, and (Co/sub 75/Ni/sub 25/)/sub 90/Ta/sub 10/ atomic percent were evaluated relative to their magnetic properties as a function of thickness. The maximum coercive force at the optimum thickness (300-AA) films. Magnetization reversal of thick films (1000 AA) was primarily determined by domain wall displacement, which may be followed by coherent rotation. The magnetization reversal in thin films, i.e. at the optimum thickness for maximum coercive force, primarily agrees with a chain-of-spheres model or a fanning mechanism.< >
ISSN:0018-9464
1941-0069
DOI:10.1109/20.104469