High quality interlayer dielectric for 4H–SiC DMOSFETs

High quality interlayer dielectric for 4H–SiC DMOSFETs

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Veröffentlicht in:Semiconductor science and technology 2007-11, Vol.22 (11), p.1193-1199
Hauptverfasser: Okayama, T, Arthur, S D, Waldrab, P, Rao, Mulpuri V
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_title Semiconductor science and technology
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creator Okayama, T
Arthur, S D
Waldrab, P
Rao, Mulpuri V
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title High quality interlayer dielectric for 4H–SiC DMOSFETs
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