A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs
When comparing the extracted carrier mobility of long- and short-channel transistors, special consideration must be given to the metallurgical gate length (L met ), neglecting the impact of source and drain junction profiles. L met can be identified with nanometer precision by using RF split-C-V mea...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-10, Vol.54 (10), p.2690-2698 |
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| container_title | IEEE transactions on electron devices |
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| creator | Severi, S. Pantisano, L. Augendre, E. San Andres, E. Eyben, P. De Meyer, K. |
| description | When comparing the extracted carrier mobility of long- and short-channel transistors, special consideration must be given to the metallurgical gate length (L met ), neglecting the impact of source and drain junction profiles. L met can be identified with nanometer precision by using RF split-C-V measurements, and physical and electrical analysis can demonstrate the accuracy of the method. Another important parameter, the external transistor resistance (R sd ), can be identified with linear current measurements of short-channel devices. However, it is important to quantify the mobility dependence from the gate length in order to obtain an accurate result. A method to estimate the electrical field (E eff ) of short-channel devices is proposed. The extracted short-channel mobility shows a universal behavior identical to the classical long-channel one. |
| doi_str_mv | 10.1109/TED.2007.904011 |
| format | Article |
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L met can be identified with nanometer precision by using RF split-C-V measurements, and physical and electrical analysis can demonstrate the accuracy of the method. Another important parameter, the external transistor resistance (R sd ), can be identified with linear current measurements of short-channel devices. However, it is important to quantify the mobility dependence from the gate length in order to obtain an accurate result. A method to estimate the electrical field (E eff ) of short-channel devices is proposed. 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L met can be identified with nanometer precision by using RF split-C-V measurements, and physical and electrical analysis can demonstrate the accuracy of the method. Another important parameter, the external transistor resistance (R sd ), can be identified with linear current measurements of short-channel devices. However, it is important to quantify the mobility dependence from the gate length in order to obtain an accurate result. A method to estimate the electrical field (E eff ) of short-channel devices is proposed. The extracted short-channel mobility shows a universal behavior identical to the classical long-channel one.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Devices</subject><subject>Drains</subject><subject>Electrical junctions</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Extractive metallurgy</subject><subject>Gates</subject><subject>Junctions</subject><subject>Length and resistance measurements</subject><subject>Logic gates</subject><subject>MOS devices</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>scattering</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Severi, S.</creatorcontrib><creatorcontrib>Pantisano, L.</creatorcontrib><creatorcontrib>Augendre, E.</creatorcontrib><creatorcontrib>San Andres, E.</creatorcontrib><creatorcontrib>Eyben, P.</creatorcontrib><creatorcontrib>De Meyer, K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Severi, S.</au><au>Pantisano, L.</au><au>Augendre, E.</au><au>San Andres, E.</au><au>Eyben, P.</au><au>De Meyer, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-10-01</date><risdate>2007</risdate><volume>54</volume><issue>10</issue><spage>2690</spage><epage>2698</epage><pages>2690-2698</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>When comparing the extracted carrier mobility of long- and short-channel transistors, special consideration must be given to the metallurgical gate length (L met ), neglecting the impact of source and drain junction profiles. L met can be identified with nanometer precision by using RF split-C-V measurements, and physical and electrical analysis can demonstrate the accuracy of the method. Another important parameter, the external transistor resistance (R sd ), can be identified with linear current measurements of short-channel devices. However, it is important to quantify the mobility dependence from the gate length in order to obtain an accurate result. A method to estimate the electrical field (E eff ) of short-channel devices is proposed. The extracted short-channel mobility shows a universal behavior identical to the classical long-channel one.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2007.904011</doi><tpages>9</tpages></addata></record> |
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| subjects | Annealing Applied sciences Devices Drains Electrical junctions Electrical resistance measurement Electronics Exact sciences and technology Extractive metallurgy Gates Junctions Length and resistance measurements Logic gates MOS devices MOSFET MOSFETs scattering Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs |
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