A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

When comparing the extracted carrier mobility of long- and short-channel transistors, special consideration must be given to the metallurgical gate length (L met ), neglecting the impact of source and drain junction profiles. L met can be identified with nanometer precision by using RF split-C-V measurements, and physical and electrical analysis can demonstrate the accuracy of the method. Another important parameter, the external transistor resistance (R sd ), can be identified with linear current measurements of short-channel devices. However, it is important to quantify the mobility dependence from the gate length in order to obtain an accurate result. A method to estimate the electrical field (E eff ) of short-channel devices is proposed. The extracted short-channel mobility shows a universal behavior identical to the classical long-channel one.