An Analytical Model for Cylindrical Thin-Film Transistors
In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, t...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-09, Vol.54 (9), p.2362-2368 |
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| container_end_page | 2368 |
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| container_issue | 9 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 54 |
| creator | Locci, S. Maccioni, M. Orgiu, E. Bonfiglio, A. |
| description | In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, the model is validated with experimental results. |
| doi_str_mv | 10.1109/TED.2007.902056 |
| format | Article |
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A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, the model is validated with experimental results.</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Composing</subject><subject>Cylindrical field-effect transistor (FET)</subject><subject>Devices</subject><subject>e-textile</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Focusing</subject><subject>Geometry</subject><subject>Insulators</subject><subject>Logic gates</subject><subject>Mathematical analysis</subject><subject>Organic thin film transistors</subject><subject>organic thin-film transistor (OTFT)</subject><subject>pentacene</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkT1PwzAQhi0EEqUwM7BESHwsaX2244-xKi0gFbGUOXIdR7hKk2K3Q_89TlOBxFC8nHx-7j3JD0LXgAcAWA3nk6cBwVgMFCY44yeoB1kmUsUZP0U9jEGmikp6ji5CWMYrZ4z0kBrVyajW1W7jjK6St6awVVI2PhnvKlcXft-df7o6nbpqlcy9roMLm8aHS3RW6irYq0Pto4_pZD5-SWfvz6_j0Sw1jPFNyiVIIowl1GLNRAlgOFdalFgxy6WGBTBtiICFFgXlQheLgkCGLRih9ELRPnrocte--drasMlXLhhbVbq2zTbkClNOCY7lP1JKzDNOZJt5f5SkrD1SRPDxKAhcAKUMSIve_kGXzdbHr42LORVKqf3iYQcZ34TgbZmvvVtpv8sB563GPGrMW415pzFO3B1idYguyijAuPA7FjGSQbv-puOctfbnmRHFCKH0G7Ueoh0</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>Locci, S.</creator><creator>Maccioni, M.</creator><creator>Orgiu, E.</creator><creator>Bonfiglio, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Locci, S.</creatorcontrib><creatorcontrib>Maccioni, M.</creatorcontrib><creatorcontrib>Orgiu, E.</creatorcontrib><creatorcontrib>Bonfiglio, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Locci, S.</au><au>Maccioni, M.</au><au>Orgiu, E.</au><au>Bonfiglio, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An Analytical Model for Cylindrical Thin-Film Transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-09-01</date><risdate>2007</risdate><volume>54</volume><issue>9</issue><spage>2362</spage><epage>2368</epage><pages>2362-2368</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. 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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2362-2368 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Applied sciences Composing Cylindrical field-effect transistor (FET) Devices e-textile Electronics Exact sciences and technology Focusing Geometry Insulators Logic gates Mathematical analysis Organic thin film transistors organic thin-film transistor (OTFT) pentacene Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film transistors Thin films Threshold voltage Transistors |
| title | An Analytical Model for Cylindrical Thin-Film Transistors |
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