An Analytical Model for Cylindrical Thin-Film Transistors

An Analytical Model for Cylindrical Thin-Film Transistors

In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, t...

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Veröffentlicht in:IEEE transactions on electron devices 2007-09, Vol.54 (9), p.2362-2368
Hauptverfasser: Locci, S., Maccioni, M., Orgiu, E., Bonfiglio, A.
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Applied sciences
Composing
Cylindrical field-effect transistor (FET)
Devices
e-textile
Electronics
Exact sciences and technology
Focusing
Geometry
Insulators
Logic gates
Mathematical analysis
Organic thin film transistors
organic thin-film transistor (OTFT)
pentacene
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film transistors
Thin films
Threshold voltage
Transistors
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Beschreibung
Zusammenfassung:In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, the model is validated with experimental results.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.902056