Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes

The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-08, Vol.54 (8), p.1860-1866
Hauptverfasser:	Tu Hoang, Holleman, J., Phuong LeMinh, Schmitz, J., Mchedlidze, T., Arguirov, T., Kittler, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Devices Diodes Dislocation loops Electric, optical and optoelectronic circuits Electroluminescence Electronics Exact sciences and technology Infrared Integrated circuits integrated optics Integrated optics. Optical fibers and wave guides integrated optoelectronics Integrated optoelectronics. Optoelectronic circuits Junctions Light emission Light emitting diodes Light sources light-emitting diodes (LEDs) luminescent devices Optical and optoelectronic circuits optoelectronic devices semiconductor device fabrication semiconductor devices Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers Silicon Silicon diodes
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Zusammenfassung:	The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2007.901072