Thermal Stability Improvement of Ni-Germano silicide Utilizing Ni-Pd Alloy for Nanoscale CMOS Technology

Thermal Stability Improvement of Ni-Germano silicide Utilizing Ni-Pd Alloy for Nanoscale CMOS Technology

In this paper, thermally stable Ni-germanosilicide technology utilizing Ni-Pd alloy and Co/TiN capping layer (Ni-Pd/Co/TiN tri-layer) is proposed for high performance strained-Si CMOS technology. The proposed Ni-germanosilicide technology exhibits low temperature silicidation with a wide temperature...

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Veröffentlicht in:IEEE transactions on nanotechnology 2007-07, Vol.6 (4), p.431-437
Hauptverfasser: Kim, Y.-J., Oh, S.-Y., Yun, J.-G., Lee, W.-J., Zhang, Y.-Y., Zhong, Z., Jung, S.-Y., Ji, H.-H., Cha, H.-S., Kim, Y.-C., Wang, J.-S., Lee, H.-D.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
CMOS
CMOS technology
Cobalt alloys
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Nanocomposites
Nanomaterials
Nanostructure
Ni-germanosilicide
Ni-Pd alloy
Ni-Pd/Co/TiN tri-layer
Nickel
Nickel base alloys
Rapid thermal annealing
Rapid thermal processing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiGe
Silicidation
Silicides
Silicon germanides
strained-Si
Surface resistance
Temperature
Thermal stability
Tin
Tin alloys
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Beschreibung
Zusammenfassung:In this paper, thermally stable Ni-germanosilicide technology utilizing Ni-Pd alloy and Co/TiN capping layer (Ni-Pd/Co/TiN tri-layer) is proposed for high performance strained-Si CMOS technology. The proposed Ni-germanosilicide technology exhibits low temperature silicidation with a wide temperature window for rapid thermal process (RTP). Moreover, sheet resistance shows stable characteristics in spite of the high temperature postsilicidation annealing up to 700 for 30 min. In addition, the surface of Ni-Pd/Co/TiN structure is much smoother than that of Ni/Co/TiN structure for both before and after the postsilicidation annealing. Therefore, the Ni-germanosilicide using the Ni-Pd/Co/TiN tri-layer is highly promising for future SiGe based nanoscale CMOS technology.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2007.897084