Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors
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| creator | ROTHSCHILD, A MITSUHASHI, R VELOSO, A LAUWERS, A DE POTTER, M DEBUSSCHERE, I JURCZAK, M NIWA, M ABSIL, P BIESEMANS, S KERNER, C SHI, X EVERAERT, J. L DATE, L CONARD, T RICHARD, O VRANCKEN, C VERBEECK, R |
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| doi_str_mv | 10.1016/j.microrel.2007.01.042 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_18790326</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>18790326</sourcerecordid><originalsourceid>FETCH-LOGICAL-p100t-d8cd5c3c7fcae5390fa2da051c71ab73116ed0529609439ae974a35d21bd6323</originalsourceid><addsrcrecordid>eNotkE9PwjAYxhujiYh-BdOLiR4237fdVnY0CEKC7DAk3shL10EJbM1aE_XTu6in5_D8yS8PY7cIMQJmj4f4ZHXXduYYCwAVA8aQiDM2wJESUZ7g-zkbAIgsEgqTS3bl_QH6ICAO2L5wwZ7sNwXbNryt-awubbHkH942O068Mt7ufg3z6UxnT6YJ_P65mDxwcq5rSe95X4Q4SfmarwNf2mj6Vs75-LUoeeio8daHtvPX7KKmozc3_zpkq-lkNZ5Fi-JlPn5aRA4BQlSNdJVqqVWtyaQyh5pERZCiVkhbJREzU0Eq8gzyROZkcpWQTCuB2yqTQg7Z3d-sI6_pWPcA2vqN68mp-9r0l-QgRSZ_AJqcWlM</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors</title><source>Elsevier ScienceDirect Journals</source><creator>ROTHSCHILD, A ; MITSUHASHI, R ; VELOSO, A ; LAUWERS, A ; DE POTTER, M ; DEBUSSCHERE, I ; JURCZAK, M ; NIWA, M ; ABSIL, P ; BIESEMANS, S ; KERNER, C ; SHI, X ; EVERAERT, J. L ; DATE, L ; CONARD, T ; RICHARD, O ; VRANCKEN, C ; VERBEECK, R</creator><creatorcontrib>ROTHSCHILD, A ; MITSUHASHI, R ; VELOSO, A ; LAUWERS, A ; DE POTTER, M ; DEBUSSCHERE, I ; JURCZAK, M ; NIWA, M ; ABSIL, P ; BIESEMANS, S ; KERNER, C ; SHI, X ; EVERAERT, J. L ; DATE, L ; CONARD, T ; RICHARD, O ; VRANCKEN, C ; VERBEECK, R</creatorcontrib><identifier>ISSN: 0026-2714</identifier><identifier>EISSN: 1872-941X</identifier><identifier>DOI: 10.1016/j.microrel.2007.01.042</identifier><identifier>CODEN: MCRLAS</identifier><language>eng</language><publisher>Oxford: Elsevier</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Microelectronics and reliability, 2007, Vol.47 (4-5), p.521-524</ispartof><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,776,780,785,786,23909,23910,25118,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18790326$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ROTHSCHILD, A</creatorcontrib><creatorcontrib>MITSUHASHI, R</creatorcontrib><creatorcontrib>VELOSO, A</creatorcontrib><creatorcontrib>LAUWERS, A</creatorcontrib><creatorcontrib>DE POTTER, M</creatorcontrib><creatorcontrib>DEBUSSCHERE, I</creatorcontrib><creatorcontrib>JURCZAK, M</creatorcontrib><creatorcontrib>NIWA, M</creatorcontrib><creatorcontrib>ABSIL, P</creatorcontrib><creatorcontrib>BIESEMANS, S</creatorcontrib><creatorcontrib>KERNER, C</creatorcontrib><creatorcontrib>SHI, X</creatorcontrib><creatorcontrib>EVERAERT, J. L</creatorcontrib><creatorcontrib>DATE, L</creatorcontrib><creatorcontrib>CONARD, T</creatorcontrib><creatorcontrib>RICHARD, O</creatorcontrib><creatorcontrib>VRANCKEN, C</creatorcontrib><creatorcontrib>VERBEECK, R</creatorcontrib><title>Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors</title><title>Microelectronics and reliability</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0026-2714</issn><issn>1872-941X</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkE9PwjAYxhujiYh-BdOLiR4237fdVnY0CEKC7DAk3shL10EJbM1aE_XTu6in5_D8yS8PY7cIMQJmj4f4ZHXXduYYCwAVA8aQiDM2wJESUZ7g-zkbAIgsEgqTS3bl_QH6ICAO2L5wwZ7sNwXbNryt-awubbHkH942O068Mt7ufg3z6UxnT6YJ_P65mDxwcq5rSe95X4Q4SfmarwNf2mj6Vs75-LUoeeio8daHtvPX7KKmozc3_zpkq-lkNZ5Fi-JlPn5aRA4BQlSNdJVqqVWtyaQyh5pERZCiVkhbJREzU0Eq8gzyROZkcpWQTCuB2yqTQg7Z3d-sI6_pWPcA2vqN68mp-9r0l-QgRSZ_AJqcWlM</recordid><startdate>200704</startdate><enddate>200704</enddate><creator>ROTHSCHILD, A</creator><creator>MITSUHASHI, R</creator><creator>VELOSO, A</creator><creator>LAUWERS, A</creator><creator>DE POTTER, M</creator><creator>DEBUSSCHERE, I</creator><creator>JURCZAK, M</creator><creator>NIWA, M</creator><creator>ABSIL, P</creator><creator>BIESEMANS, S</creator><creator>KERNER, C</creator><creator>SHI, X</creator><creator>EVERAERT, J. L</creator><creator>DATE, L</creator><creator>CONARD, T</creator><creator>RICHARD, O</creator><creator>VRANCKEN, C</creator><creator>VERBEECK, R</creator><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>200704</creationdate><title>Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors</title><author>ROTHSCHILD, A ; MITSUHASHI, R ; VELOSO, A ; LAUWERS, A ; DE POTTER, M ; DEBUSSCHERE, I ; JURCZAK, M ; NIWA, M ; ABSIL, P ; BIESEMANS, S ; KERNER, C ; SHI, X ; EVERAERT, J. L ; DATE, L ; CONARD, T ; RICHARD, O ; VRANCKEN, C ; VERBEECK, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p100t-d8cd5c3c7fcae5390fa2da051c71ab73116ed0529609439ae974a35d21bd6323</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ROTHSCHILD, A</creatorcontrib><creatorcontrib>MITSUHASHI, R</creatorcontrib><creatorcontrib>VELOSO, A</creatorcontrib><creatorcontrib>LAUWERS, A</creatorcontrib><creatorcontrib>DE POTTER, M</creatorcontrib><creatorcontrib>DEBUSSCHERE, I</creatorcontrib><creatorcontrib>JURCZAK, M</creatorcontrib><creatorcontrib>NIWA, M</creatorcontrib><creatorcontrib>ABSIL, P</creatorcontrib><creatorcontrib>BIESEMANS, S</creatorcontrib><creatorcontrib>KERNER, C</creatorcontrib><creatorcontrib>SHI, X</creatorcontrib><creatorcontrib>EVERAERT, J. L</creatorcontrib><creatorcontrib>DATE, L</creatorcontrib><creatorcontrib>CONARD, T</creatorcontrib><creatorcontrib>RICHARD, O</creatorcontrib><creatorcontrib>VRANCKEN, C</creatorcontrib><creatorcontrib>VERBEECK, R</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ROTHSCHILD, A</au><au>MITSUHASHI, R</au><au>VELOSO, A</au><au>LAUWERS, A</au><au>DE POTTER, M</au><au>DEBUSSCHERE, I</au><au>JURCZAK, M</au><au>NIWA, M</au><au>ABSIL, P</au><au>BIESEMANS, S</au><au>KERNER, C</au><au>SHI, X</au><au>EVERAERT, J. L</au><au>DATE, L</au><au>CONARD, T</au><au>RICHARD, O</au><au>VRANCKEN, C</au><au>VERBEECK, R</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors</atitle><btitle>Microelectronics and reliability</btitle><date>2007-04</date><risdate>2007</risdate><volume>47</volume><issue>4-5</issue><spage>521</spage><epage>524</epage><pages>521-524</pages><issn>0026-2714</issn><eissn>1872-941X</eissn><coden>MCRLAS</coden><cop>Oxford</cop><pub>Elsevier</pub><doi>10.1016/j.microrel.2007.01.042</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0026-2714 |
| ispartof | Microelectronics and reliability, 2007, Vol.47 (4-5), p.521-524 |
| issn | 0026-2714 1872-941X |
| language | eng |
| recordid | cdi_pascalfrancis_primary_18790326 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-18T04%3A36%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Optimization%20of%20HfSiON%20using%20a%20design%20of%20experiment%20(DOE)%20approach%20on%200.45%20V%20Vt%20Ni-FUSI%20CMOS%20transistors&rft.btitle=Microelectronics%20and%20reliability&rft.au=ROTHSCHILD,%20A&rft.date=2007-04&rft.volume=47&rft.issue=4-5&rft.spage=521&rft.epage=524&rft.pages=521-524&rft.issn=0026-2714&rft.eissn=1872-941X&rft.coden=MCRLAS&rft_id=info:doi/10.1016/j.microrel.2007.01.042&rft_dat=%3Cpascalfrancis%3E18790326%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |