Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements

Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements

The extraction of the equivalent circuit parameters for bipolar transistors is undertaken via high-frequency S-parameter and low-frequency noise measurements. The extraction is exhaustively detailed here for a double purpose. First, it highlights the not-so-justified approximations so often made for...

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Veröffentlicht in:Semiconductor science and technology 2007-05, Vol.22 (5), p.492-496
Hauptverfasser: Penarier, A, G Jarrix, S, Perotin, M, Pascal, F, Delseny, C
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Sprache:eng
Schlagworte:
Applied sciences
Electric, optical and optoelectronic circuits
Electronics
Engineering Sciences
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Theoretical study. Circuits analysis and design
Transistors
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container_end_page 496
container_issue 5
container_start_page 492
container_title Semiconductor science and technology
container_volume 22
creator Penarier, A
G Jarrix, S
Perotin, M
Pascal, F
Delseny, C
description The extraction of the equivalent circuit parameters for bipolar transistors is undertaken via high-frequency S-parameter and low-frequency noise measurements. The extraction is exhaustively detailed here for a double purpose. First, it highlights the not-so-justified approximations so often made for the extraction of the extrinsic base-collector capacitance. Second, it emphasizes the similarity of the values obtained for series resistances in both the low-frequency and high-frequency ranges
doi_str_mv 10.1088/0268-1242/22/5/006
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subjects Applied sciences
Electric, optical and optoelectronic circuits
Electronics
Engineering Sciences
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Theoretical study. Circuits analysis and design
Transistors
title Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements
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