Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements
The extraction of the equivalent circuit parameters for bipolar transistors is undertaken via high-frequency S-parameter and low-frequency noise measurements. The extraction is exhaustively detailed here for a double purpose. First, it highlights the not-so-justified approximations so often made for...
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Veröffentlicht in: | Semiconductor science and technology 2007-05, Vol.22 (5), p.492-496 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The extraction of the equivalent circuit parameters for bipolar transistors is undertaken via high-frequency S-parameter and low-frequency noise measurements. The extraction is exhaustively detailed here for a double purpose. First, it highlights the not-so-justified approximations so often made for the extraction of the extrinsic base-collector capacitance. Second, it emphasizes the similarity of the values obtained for series resistances in both the low-frequency and high-frequency ranges |
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ISSN: | 0268-1242 1361-6641 |
DOI: | 10.1088/0268-1242/22/5/006 |