Shallow trench isolation for the 45-nm CMOS node and geometry dependence of STI stress on CMOS device performance : The advanced semiconductor manufacturing conference
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2007, Vol.20 (2), p.59-67 |
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| container_title | IEEE transactions on semiconductor manufacturing |
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| creator | TILKE, Armin T STAPELMANN, Chris JAIN, Alok ELLER, Manfred BACH, Karl-Heinz HAMPP, Roland LINDSAY, Richard CONTI, Richard WILLE, William JAISWAL, Rakesh GALIANO, Maria |
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| fulltext | fulltext |
| identifier | ISSN: 0894-6507 |
| ispartof | IEEE transactions on semiconductor manufacturing, 2007, Vol.20 (2), p.59-67 |
| issn | 0894-6507 1558-2345 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_18735055 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Shallow trench isolation for the 45-nm CMOS node and geometry dependence of STI stress on CMOS device performance : The advanced semiconductor manufacturing conference |
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