Shallow trench isolation for the 45-nm CMOS node and geometry dependence of STI stress on CMOS device performance : The advanced semiconductor manufacturing conference

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2007, Vol.20 (2), p.59-67
Hauptverfasser:	TILKE, Armin T, STAPELMANN, Chris, JAIN, Alok, ELLER, Manfred, BACH, Karl-Heinz, HAMPP, Roland, LINDSAY, Richard, CONTI, Richard, WILLE, William, JAISWAL, Rakesh, GALIANO, Maria
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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