A High-Performance Body-Tied FinFET Bandgap Engineered SONOS (BE-SONOS) for nand-Type Flash Memory
A body-tied FinFET bandgap engineered (BE)-silicon-oxide-nitride-oxide-silicon (SONOS) nand Flash device is successfully demonstrated for the first time. BE-SONOS device with a BE oxide-nitride-oxide barrier is integrated in the FinFET structure with a 30-nm fin width. FinFET BE-SONOS can overcome t...
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Veröffentlicht in: | IEEE electron device letters 2007-05, Vol.28 (5), p.443-445 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A body-tied FinFET bandgap engineered (BE)-silicon-oxide-nitride-oxide-silicon (SONOS) nand Flash device is successfully demonstrated for the first time. BE-SONOS device with a BE oxide-nitride-oxide barrier is integrated in the FinFET structure with a 30-nm fin width. FinFET BE-SONOS can overcome the unsolvable tradeoff between retention and erase speed of the conventional SONOS. Compared with the current floating-gate Flash devices, FinFET BE-SONOS provides both retention and erase-speed performance, while eliminating the scaling limitations and is, thus, an important candidate for further scaling of nand Flash |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2007.895421 |