Anomalous Hall effect and magnetoresistance of (FexSn1−x)1−y(SiO2)y films

Structural, magnetic and transport properties were investigated for heterogeneous (FexSn1-x)1-y(SiO2)y films deposited on oxidized silicon substrates at room temperature with RF magnetron sputtering. X-ray diffraction indicated that the films consist of a nanocrystalline phase of FeSn2 embedded into an amorphous background. For (FexSn1-x)92.33(SiO2)7.67, it was demonstrated that with the increase in the Fe component an evolution from negative isotropic magnetoresistance (MR) behaviour to one with a mixture of anisotropic magnetoresistance and isotropic negative MR occurs. On fixing the SiO2 percentage and decreasing the Fe-Sn ratio, the negative transverse MR first increases and then decreases. For samples having a fixed Fe-Sn ratio, the negative transverse MR increases with the increase in SiO2. Compared with the Fe-Sn system, the addition of 7.67 at.% SiO2 enhances the saturated Hall resistivity. Further increase in SiO2 introduces a complicated saturated Hall resistivity dependence on the concentration of SiO2.