Magnetoresistance of Magnetic Tunneling Junctions with Step-Like Potential Barriers

The influence of the bias voltage on the magnetoresistance of a magnetic tunneling junction with a step-like potential barrier has been studied theoretically in the frame of a two-band model of free electrons in ferromagnetic electrodes. It is shown that the dependence of the magnetoresistance of the magnetic tunneling junction on the bias voltage can vary according to the type and the thickness of the isolators forming a step-like tunneling potential barrier. It has been found out that the magnetoresistance of the magnetic tunneling junction can change its sign and oscillate with increasing bias voltage