Analytic Charge Model for Surrounding-Gate MOSFETs
This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation reg...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-03, Vol.54 (3), p.492-496 |
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| container_end_page | 496 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 54 |
| creator | Yu, Bo Lu, Wei-Yuan Lu, Huaxin Taur, Yuan |
| description | This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters and hence predictive. In addition, it is inherently not source-referenced to avoid asymmetries. It is shown that the current-voltage characteristics generated by this model agree with the numerical simulation results |
| doi_str_mv | 10.1109/TED.2006.890264 |
| format | Article |
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Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters and hence predictive. In addition, it is inherently not source-referenced to avoid asymmetries. It is shown that the current-voltage characteristics generated by this model agree with the numerical simulation results</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.890264</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analytical models ; Applied sciences ; Approximation ; Asymmetry ; Capacitance ; Charge ; Compact model ; Electronics ; Exact sciences and technology ; Exact solutions ; Integrated circuit modeling ; Mathematical analysis ; Mathematical model ; Mathematical models ; MOSFET ; MOSFETs ; Numerical models ; Poisson equation ; Semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; surrounding gate (SG) ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.492-496</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-f45c596aa467b5c3b36b85fe12b3a35c66b3356dcd5ff9f0b4c3556a42ba9e253</citedby><cites>FETCH-LOGICAL-c413t-f45c596aa467b5c3b36b85fe12b3a35c66b3356dcd5ff9f0b4c3556a42ba9e253</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4114866$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4114866$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18554924$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yu, Bo</creatorcontrib><creatorcontrib>Lu, Wei-Yuan</creatorcontrib><creatorcontrib>Lu, Huaxin</creatorcontrib><creatorcontrib>Taur, Yuan</creatorcontrib><title>Analytic Charge Model for Surrounding-Gate MOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters and hence predictive. In addition, it is inherently not source-referenced to avoid asymmetries. It is shown that the current-voltage characteristics generated by this model agree with the numerical simulation results</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Approximation</subject><subject>Asymmetry</subject><subject>Capacitance</subject><subject>Charge</subject><subject>Compact model</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Exact solutions</subject><subject>Integrated circuit modeling</subject><subject>Mathematical analysis</subject><subject>Mathematical model</subject><subject>Mathematical models</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Numerical models</subject><subject>Poisson equation</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>surrounding gate (SG)</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkb1PwzAQxS0EEqUwM7BUSMCU1vb5rvGISvmQQB0Kc-S4NgSFBOxm4L_HUSuQGGA63b3fveE9xo4FHwvB9eRxfjWWnNM411yS2mEDgTjNNCnaZQPORZ5pyGGfHcT4mlZSSg6YvGxM_bmu7Gj2YsKzGz20K1ePfBtGyy6EtmtWVfOc3Zh1khbL6_ljPGR73tTRHW3nkD2l8-w2u1_c3M0u7zOrBKwzr9CiJmMUTUu0UAKVOXonZAkG0BKVAEgru0LvteelsoBIRsnSaCcRhuxi4_se2o_OxXXxVkXr6to0ru1ioTkQoAD-L5lPkQNK7MnzP0lQSpGY6gSe_gJf2y6krJIbpRhlLntosoFsaGMMzhfvoXoz4bMQvOhLKVIpRV9KsSklfZxtbU20pvbBNLaKP285otKy5042XOWc-5aVECongi8R95GW</recordid><startdate>20070301</startdate><enddate>20070301</enddate><creator>Yu, Bo</creator><creator>Lu, Wei-Yuan</creator><creator>Lu, Huaxin</creator><creator>Taur, Yuan</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20070301</creationdate><title>Analytic Charge Model for Surrounding-Gate MOSFETs</title><author>Yu, Bo ; Lu, Wei-Yuan ; Lu, Huaxin ; Taur, Yuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c413t-f45c596aa467b5c3b36b85fe12b3a35c66b3356dcd5ff9f0b4c3556a42ba9e253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Analytical models</topic><topic>Applied sciences</topic><topic>Approximation</topic><topic>Asymmetry</topic><topic>Capacitance</topic><topic>Charge</topic><topic>Compact model</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Exact solutions</topic><topic>Integrated circuit modeling</topic><topic>Mathematical analysis</topic><topic>Mathematical model</topic><topic>Mathematical models</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Numerical models</topic><topic>Poisson equation</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>surrounding gate (SG)</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu, Bo</creatorcontrib><creatorcontrib>Lu, Wei-Yuan</creatorcontrib><creatorcontrib>Lu, Huaxin</creatorcontrib><creatorcontrib>Taur, Yuan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu, Bo</au><au>Lu, Wei-Yuan</au><au>Lu, Huaxin</au><au>Taur, Yuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analytic Charge Model for Surrounding-Gate MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-03-01</date><risdate>2007</risdate><volume>54</volume><issue>3</issue><spage>492</spage><epage>496</epage><pages>492-496</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters and hence predictive. In addition, it is inherently not source-referenced to avoid asymmetries. It is shown that the current-voltage characteristics generated by this model agree with the numerical simulation results</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.890264</doi><tpages>5</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.492-496 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Applied sciences Approximation Asymmetry Capacitance Charge Compact model Electronics Exact sciences and technology Exact solutions Integrated circuit modeling Mathematical analysis Mathematical model Mathematical models MOSFET MOSFETs Numerical models Poisson equation Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices surrounding gate (SG) Transistors |
| title | Analytic Charge Model for Surrounding-Gate MOSFETs |
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