Analytic Charge Model for Surrounding-Gate MOSFETs

This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation reg...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-03, Vol.54 (3), p.492-496
Hauptverfasser:	Yu, Bo, Lu, Wei-Yuan, Lu, Huaxin, Taur, Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Applied sciences Approximation Asymmetry Capacitance Charge Compact model Electronics Exact sciences and technology Exact solutions Integrated circuit modeling Mathematical analysis Mathematical model Mathematical models MOSFET MOSFETs Numerical models Poisson equation Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices surrounding gate (SG) Transistors
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Beschreibung
Zusammenfassung:	This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters and hence predictive. In addition, it is inherently not source-referenced to avoid asymmetries. It is shown that the current-voltage characteristics generated by this model agree with the numerical simulation results
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2006.890264