A Single Supply, High Linearity 2-W PA MMIC for WLAN Applications Using Quasi-Enhancement Mode PHEMTs

A fully matched, 2-W high linearity amplifier monolithic microwave integrated circuit, by using quasi-enhancement mode technology of AlGaAs/InGaAs/ GaAs pseudomorphic high electron mobility transistors, is demonstrated for wireless local area network applications. At Vgs= 0 V, V ds = 5 V, this power...

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Veröffentlicht in:IEEE microwave and wireless components letters 2006-11, Vol.16 (11), p.618-620
Hauptverfasser: LIN, Che-Hung, LIU, Hong-Zhi, CHU, Chen-Kuo, HUANG, Hou-Kuei, LIU, Chi-Chuan, CHANG, Ching-Hsueh, WU, Chang-Luen, CHANG, Chian-Sern, WANG, Yeong-Her
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Sprache:eng
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Zusammenfassung:A fully matched, 2-W high linearity amplifier monolithic microwave integrated circuit, by using quasi-enhancement mode technology of AlGaAs/InGaAs/ GaAs pseudomorphic high electron mobility transistors, is demonstrated for wireless local area network applications. At Vgs= 0 V, V ds = 5 V, this power amplifier has achieved 14-dB small-signal gain, 33-dBm output power at 1-dB gain compression point, and 34.5-dBm saturated output power with 35% power added efficiency at 5.8 GHz. Moreover, high-linearity with 45.2-dBm third-order intercept point is also achieved
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2006.884912