Proton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition
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Veröffentlicht in: | Semiconductor science and technology 2006-10, Vol.21 (10), p.1441-1446 |
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creator | Gareso, P L Buda, M Fu, L Tan, H H Jagadish, C Dao, L V Wen, X Hannaford, P |
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doi_str_mv | 10.1088/0268-1242/21/10/013 |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Interface structure and roughness Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum wells Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | Proton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition |
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