High voltage pulse power supply using IGBT stacks

High voltage pulse power supply using IGBT stacks and pulse transformer for plasma source ion implantation is proposed in this study. To increase voltage rating, twelve IGBTs are used in series and a step-up pulse transformer is utilized. To increase current rating, the proposed system makes use of...

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Hauptverfasser:	Jong-Hyun Kim, Myung-Hyo Ryu, Shenderey, S., Jong-Soo Kim, Geun-Hie Rim
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Capacitors Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Insulated gate bipolar transistors Ion implantation Other multijunction devices. Power transistors. Thyristors Plasma sources Power electronics, power supplies Power semiconductor switches Pulse generation Pulse transformers Pulsed power supplies Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transformers and inductors Voltage
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Beschreibung
Zusammenfassung:	High voltage pulse power supply using IGBT stacks and pulse transformer for plasma source ion implantation is proposed in this study. To increase voltage rating, twelve IGBTs are used in series and a step-up pulse transformer is utilized. To increase current rating, the proposed system makes use of synchronized three pulse generators composed of diode, capacitor and IGBT stack. The proposed pulse power supply uses only semiconductor switches made of IGBTs with only two active drivers. Hence, the system is compact, and has long lifetime, high efficiency, and high parameter flexibility such as voltage magnitude, the PRR. and the pulse width.
DOI:	10.1109/IECON.2004.1432259