UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors

The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm 2 , which is quite low compared to...

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Veröffentlicht in:	IEEE electron device letters 2006-08, Vol.27 (8), p.656-658
Hauptverfasser:	LEE, Heon-Bok, AN, Hyun-Su, CHO, Hyun-Ick, LEE, Jung-Hee, HAHM, Sung-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Applied sciences Dielectric substrates Drains Electronics Epitaxial layers Exact sciences and technology Gallium nitride Gallium nitrides GaN General equipment and techniques Image sensors Imaging devices Instruments, apparatus, components and techniques common to several branches of physics and astronomy Leakage current MISFET MISFETs Optoelectronic devices Photodetectors Physics Schottky barrier Schottky barriers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon Silicon substrates Transistors ultraviolet (UV) photodetector Wavelengths
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Zusammenfassung:	The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm 2 , which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2006.879044