On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures

Bibliographische Detailangaben

Veröffentlicht in:	Semiconductor science and technology 2006-08, Vol.21 (8), p.1053-1058
Hauptverfasser:	DÖKME, Ilbilge, ALTINDAL, Semsettin
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface double layers, schottky barriers, and work functions
Online-Zugang:	Volltext
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