Quasi-planar high-Q millimeter-wave resonators

Several low-profile 250-mum-high Ka-band cavity resonators are demonstrated with resonant frequencies near 26 GHz and unloaded quality (Q) factors greater than 400. The air-filled copper cavity resonators are fabricated on a silicon substrate using a photolithographic process. A microrectangular coa...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2006-06, Vol.54 (6), p.2439-2446
Hauptverfasser:	Vanhille, K.J., Fontaine, D.L., Nichols, C., Filipovic, D.S., Popovic, Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cavity resonator Cavity resonators Circuit properties Coaxial components coaxial transmission line Copper Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Feeds Finite element methods Mathematical analysis Microelectronic fabrication (materials and surfaces technology) Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave technology Oscillators, resonators, synthetizers Photolithography Q factor Q factors quality Resonant frequencies Resonant frequency Resonators Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon substrates Transmission lines
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Beschreibung
Zusammenfassung:	Several low-profile 250-mum-high Ka-band cavity resonators are demonstrated with resonant frequencies near 26 GHz and unloaded quality (Q) factors greater than 400. The air-filled copper cavity resonators are fabricated on a silicon substrate using a photolithographic process. A microrectangular coaxial transmission-line feed is integrated in the same process. Four resonators with different mechanical support structures are demonstrated. The resonators are designed using the finite-element method and simulation of both the resonant frequency and Q factor agree well with measurements
ISSN:	0018-9480 1557-9670
DOI:	10.1109/TMTT.2006.875794