Field-emission triode of low-temperature synthesized ZnO nanowires
A field-emission triode based on the low-temperature (75/spl deg/C) and hydrothermally synthesized single-crystalline zinc-oxide nanowires (ZnO NWs) grown on Si substrate with a silicon dioxide (SiO/sub 2/) insulator was fabricated for the controllable field-emission device application. Field-emissi...
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2006-05, Vol.5 (3), p.216-219 |
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| creator | Lee, Chia Ying Li, Seu Yi Lin, Pang Tseng, Tseung-Yuen |
| description | A field-emission triode based on the low-temperature (75/spl deg/C) and hydrothermally synthesized single-crystalline zinc-oxide nanowires (ZnO NWs) grown on Si substrate with a silicon dioxide (SiO/sub 2/) insulator was fabricated for the controllable field-emission device application. Field-emission measurement reveals that the ZnO NWs fabricated on the Si substrate exhibit a good emission property with the turn-on electric field and threshold electric field (current density of 1 mA/cm/sup 2/) of 1.6 and 2.1 V//spl mu/m, respectively, with a field enhancement factor /spl beta/ of 3340. The field-emission properties of the ZnO NW-based triode exhibit the controllable characteristics. The well-controlled field-emission characteristics can be divided into three parts: gate leakage region, linear region, and saturation region. Therefore, this study provides a low-temperature field-emission triode fabrication process that is compatible with the Si-based microelectronic integration, and the field-emission measurements also reveal that the emission behavior can be well controlled by adopting the triode structure. |
| doi_str_mv | 10.1109/TNANO.2006.874049 |
| format | Article |
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Field-emission measurement reveals that the ZnO NWs fabricated on the Si substrate exhibit a good emission property with the turn-on electric field and threshold electric field (current density of 1 mA/cm/sup 2/) of 1.6 and 2.1 V//spl mu/m, respectively, with a field enhancement factor /spl beta/ of 3340. The field-emission properties of the ZnO NW-based triode exhibit the controllable characteristics. The well-controlled field-emission characteristics can be divided into three parts: gate leakage region, linear region, and saturation region. Therefore, this study provides a low-temperature field-emission triode fabrication process that is compatible with the Si-based microelectronic integration, and the field-emission measurements also reveal that the emission behavior can be well controlled by adopting the triode structure.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2006.874049</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Current density ; Current measurement ; Density measurement ; Electric fields ; Electric variables measurement ; Electronic tubes, masers ; Electronics ; Exact sciences and technology ; Fabrication ; Field-emission triode and device ; Gate leakage ; hydrothermal method ; Insulation ; Nanowires ; nanowires (NWs) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon compounds ; Silicon dioxide ; Silicon substrates ; Stability ; Triodes ; Vacuum microelectronics ; Zinc oxide ; ZnO</subject><ispartof>IEEE transactions on nanotechnology, 2006-05, Vol.5 (3), p.216-219</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c416t-30608980ee2842bec8ade8e20beef0d6e0124528b1c13e00f1eb6e0b7d729b753</citedby><cites>FETCH-LOGICAL-c416t-30608980ee2842bec8ade8e20beef0d6e0124528b1c13e00f1eb6e0b7d729b753</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1632137$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1632137$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17821979$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Chia Ying</creatorcontrib><creatorcontrib>Li, Seu Yi</creatorcontrib><creatorcontrib>Lin, Pang</creatorcontrib><creatorcontrib>Tseng, Tseung-Yuen</creatorcontrib><title>Field-emission triode of low-temperature synthesized ZnO nanowires</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><description>A field-emission triode based on the low-temperature (75/spl deg/C) and hydrothermally synthesized single-crystalline zinc-oxide nanowires (ZnO NWs) grown on Si substrate with a silicon dioxide (SiO/sub 2/) insulator was fabricated for the controllable field-emission device application. Field-emission measurement reveals that the ZnO NWs fabricated on the Si substrate exhibit a good emission property with the turn-on electric field and threshold electric field (current density of 1 mA/cm/sup 2/) of 1.6 and 2.1 V//spl mu/m, respectively, with a field enhancement factor /spl beta/ of 3340. The field-emission properties of the ZnO NW-based triode exhibit the controllable characteristics. The well-controlled field-emission characteristics can be divided into three parts: gate leakage region, linear region, and saturation region. Therefore, this study provides a low-temperature field-emission triode fabrication process that is compatible with the Si-based microelectronic integration, and the field-emission measurements also reveal that the emission behavior can be well controlled by adopting the triode structure.</description><subject>Applied sciences</subject><subject>Current density</subject><subject>Current measurement</subject><subject>Density measurement</subject><subject>Electric fields</subject><subject>Electric variables measurement</subject><subject>Electronic tubes, masers</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Field-emission triode and device</subject><subject>Gate leakage</subject><subject>hydrothermal method</subject><subject>Insulation</subject><subject>Nanowires</subject><subject>nanowires (NWs)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon compounds</subject><subject>Silicon dioxide</subject><subject>Silicon substrates</subject><subject>Stability</subject><subject>Triodes</subject><subject>Vacuum microelectronics</subject><subject>Zinc oxide</subject><subject>ZnO</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0d9LwzAQB_AiCv78A8SXIqhPnXdp2iSPOvwFw70oiC8hba-Y0TUz6Rjzr7dzg4EP4lOO3OeOhG8UnSIMEEFdvzzfPI8HDCAfSMGBq53oABXHBEBmu32dpXmCLHvbjw5DmACgyDN5EN3eW2qqhKY2BOvauPPWVRS7Om7cIuloOiNvurmnOCzb7oOC_aIqfm_HcWtat7CewnG0V5sm0MnmPIpe7-9eho_JaPzwNLwZJSXHvEtSyEEqCURMclZQKU1FkhgURDVUOQEynjFZYIkpAdRIRX9ZiEowVYgsPYqu1ntn3n3OKXS6f3RJTWNacvOgpcoZCI7Qy8s_JZPIIZX_gQBMCtnD819w4ua-7b-rFTKGyFH1CNeo9C4ET7WeeTs1fqkR9Col_ZOSXqWk1yn1MxebxSaUpqm9aUsbtoNCMlRi5c7WzhLRtp2nDFORfgOQwpoK</recordid><startdate>20060501</startdate><enddate>20060501</enddate><creator>Lee, Chia Ying</creator><creator>Li, Seu Yi</creator><creator>Lin, Pang</creator><creator>Tseng, Tseung-Yuen</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060501</creationdate><title>Field-emission triode of low-temperature synthesized ZnO nanowires</title><author>Lee, Chia Ying ; Li, Seu Yi ; Lin, Pang ; Tseng, Tseung-Yuen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c416t-30608980ee2842bec8ade8e20beef0d6e0124528b1c13e00f1eb6e0b7d729b753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Applied sciences</topic><topic>Current density</topic><topic>Current measurement</topic><topic>Density measurement</topic><topic>Electric fields</topic><topic>Electric variables measurement</topic><topic>Electronic tubes, masers</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Field-emission triode and device</topic><topic>Gate leakage</topic><topic>hydrothermal method</topic><topic>Insulation</topic><topic>Nanowires</topic><topic>nanowires (NWs)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon compounds</topic><topic>Silicon dioxide</topic><topic>Silicon substrates</topic><topic>Stability</topic><topic>Triodes</topic><topic>Vacuum microelectronics</topic><topic>Zinc oxide</topic><topic>ZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Chia Ying</creatorcontrib><creatorcontrib>Li, Seu Yi</creatorcontrib><creatorcontrib>Lin, Pang</creatorcontrib><creatorcontrib>Tseng, Tseung-Yuen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Chia Ying</au><au>Li, Seu Yi</au><au>Lin, Pang</au><au>Tseng, Tseung-Yuen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Field-emission triode of low-temperature synthesized ZnO nanowires</atitle><jtitle>IEEE transactions on nanotechnology</jtitle><stitle>TNANO</stitle><date>2006-05-01</date><risdate>2006</risdate><volume>5</volume><issue>3</issue><spage>216</spage><epage>219</epage><pages>216-219</pages><issn>1536-125X</issn><eissn>1941-0085</eissn><coden>ITNECU</coden><abstract>A field-emission triode based on the low-temperature (75/spl deg/C) and hydrothermally synthesized single-crystalline zinc-oxide nanowires (ZnO NWs) grown on Si substrate with a silicon dioxide (SiO/sub 2/) insulator was fabricated for the controllable field-emission device application. Field-emission measurement reveals that the ZnO NWs fabricated on the Si substrate exhibit a good emission property with the turn-on electric field and threshold electric field (current density of 1 mA/cm/sup 2/) of 1.6 and 2.1 V//spl mu/m, respectively, with a field enhancement factor /spl beta/ of 3340. The field-emission properties of the ZnO NW-based triode exhibit the controllable characteristics. The well-controlled field-emission characteristics can be divided into three parts: gate leakage region, linear region, and saturation region. Therefore, this study provides a low-temperature field-emission triode fabrication process that is compatible with the Si-based microelectronic integration, and the field-emission measurements also reveal that the emission behavior can be well controlled by adopting the triode structure.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TNANO.2006.874049</doi><tpages>4</tpages></addata></record> |
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| subjects | Applied sciences Current density Current measurement Density measurement Electric fields Electric variables measurement Electronic tubes, masers Electronics Exact sciences and technology Fabrication Field-emission triode and device Gate leakage hydrothermal method Insulation Nanowires nanowires (NWs) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon compounds Silicon dioxide Silicon substrates Stability Triodes Vacuum microelectronics Zinc oxide ZnO |
| title | Field-emission triode of low-temperature synthesized ZnO nanowires |
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