Analytical modeling of field-induced interband tunneling-effect transistors and its application
In the room-temperature I-V characteristics of field-induced interband tunneling-effect transistors (FITETs), negative-differential conductance (NDC) characteristics as well as negative-differential transconductance (NDT) characteristics have been observed. The key operation principle of this quantu...
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2006-05, Vol.5 (3), p.192-200 |
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| container_title | IEEE transactions on nanotechnology |
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| creator | Song, Seung-Hwan Kim, Kyung Rok Kang, Sangwoo Kim, Jin Ho Huh, Jung Im Kang, Kwon Chil Song, Ki-Whan Lee, Jong Duk Park, Byung-Gook |
| description | In the room-temperature I-V characteristics of field-induced interband tunneling-effect transistors (FITETs), negative-differential conductance (NDC) characteristics as well as negative-differential transconductance (NDT) characteristics have been observed. The key operation principle of this quantum-tunneling device is the field-induced interband tunneling. To include the effect of interband tunneling, we have developed an analytical equation of interband tunneling current. Due to the inherent SOI-MOSFET structure of the FITET, the current equation of MOSFET has also been included in the analytical equation of the FITET. By comparing the calculated data from these two current components with the measured data, an additional excess tunneling current component has been introduced in the final analytical equation of the FITET. SPICE simulation results with this analytical model have shown good agreements with the experimental results. Also, this analytical model has been applied to verify the functionality of a simple digital logic gate such as XOR and four-level parity checker made by one FITET. |
| doi_str_mv | 10.1109/TNANO.2006.869950 |
| format | Article |
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The key operation principle of this quantum-tunneling device is the field-induced interband tunneling. To include the effect of interband tunneling, we have developed an analytical equation of interband tunneling current. Due to the inherent SOI-MOSFET structure of the FITET, the current equation of MOSFET has also been included in the analytical equation of the FITET. By comparing the calculated data from these two current components with the measured data, an additional excess tunneling current component has been introduced in the final analytical equation of the FITET. SPICE simulation results with this analytical model have shown good agreements with the experimental results. Also, this analytical model has been applied to verify the functionality of a simple digital logic gate such as XOR and four-level parity checker made by one FITET.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2006.869950</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analytical model ; Analytical models ; Applied sciences ; Circuit properties ; CMOS technology ; Degradation ; Devices ; Digital circuits ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Equations ; Exact sciences and technology ; field-induced interband tunneling-effect transistor (FITET) ; interband tunneling ; Logic ; Mathematical analysis ; Mathematical models ; Molecular electronics, nanoelectronics ; MOSFET circuits ; MOSFETs ; multivalued logic ; Nanoscale devices ; negative-differential conductance (NDC) ; negative-differential transconductance (NDT) ; parity checker ; Quantum mechanics ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SPICE ; Studies ; Transconductance ; Transistors ; Tunneling ; XOR</subject><ispartof>IEEE transactions on nanotechnology, 2006-05, Vol.5 (3), p.192-200</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-cef6a3f50d47bbd9e4b60e2ae6111b370d7578d66b7696f6f7a9f7acc54e42fd3</citedby><cites>FETCH-LOGICAL-c385t-cef6a3f50d47bbd9e4b60e2ae6111b370d7578d66b7696f6f7a9f7acc54e42fd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1632133$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23930,23931,25140,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1632133$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17821975$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Song, Seung-Hwan</creatorcontrib><creatorcontrib>Kim, Kyung Rok</creatorcontrib><creatorcontrib>Kang, Sangwoo</creatorcontrib><creatorcontrib>Kim, Jin Ho</creatorcontrib><creatorcontrib>Huh, Jung Im</creatorcontrib><creatorcontrib>Kang, Kwon Chil</creatorcontrib><creatorcontrib>Song, Ki-Whan</creatorcontrib><creatorcontrib>Lee, Jong Duk</creatorcontrib><creatorcontrib>Park, Byung-Gook</creatorcontrib><title>Analytical modeling of field-induced interband tunneling-effect transistors and its application</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><description>In the room-temperature I-V characteristics of field-induced interband tunneling-effect transistors (FITETs), negative-differential conductance (NDC) characteristics as well as negative-differential transconductance (NDT) characteristics have been observed. The key operation principle of this quantum-tunneling device is the field-induced interband tunneling. To include the effect of interband tunneling, we have developed an analytical equation of interband tunneling current. Due to the inherent SOI-MOSFET structure of the FITET, the current equation of MOSFET has also been included in the analytical equation of the FITET. By comparing the calculated data from these two current components with the measured data, an additional excess tunneling current component has been introduced in the final analytical equation of the FITET. SPICE simulation results with this analytical model have shown good agreements with the experimental results. Also, this analytical model has been applied to verify the functionality of a simple digital logic gate such as XOR and four-level parity checker made by one FITET.</description><subject>Analytical model</subject><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>CMOS technology</subject><subject>Degradation</subject><subject>Devices</subject><subject>Digital circuits</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Equations</subject><subject>Exact sciences and technology</subject><subject>field-induced interband tunneling-effect transistor (FITET)</subject><subject>interband tunneling</subject><subject>Logic</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Molecular electronics, nanoelectronics</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>multivalued logic</subject><subject>Nanoscale devices</subject><subject>negative-differential conductance (NDC)</subject><subject>negative-differential transconductance (NDT)</subject><subject>parity checker</subject><subject>Quantum mechanics</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SPICE</subject><subject>Studies</subject><subject>Transconductance</subject><subject>Transistors</subject><subject>Tunneling</subject><subject>XOR</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kT9rHDEQxZeQgB3HH8CkWQJJqr1opNW_8jBJbDB244A7oZVGQWZPe5G0hb99dD6DIUWKYQbm917xXtddANkAEP3t_nZ7e7ehhIiNElpz8qY7BT3CQIjib9vNmRiA8oeT7n0pj4SAFFyddmab7PxUo7Nzv1s8zjH97pfQh4izH2Lyq0Pfx1QxTzb5vq4pPUMDhoCu9jXbVGKpSy79AYi17f1-bo41LulD9y7YueD5yz7rfv34fn95Ndzc_by-3N4MjileB4dBWBY48aOcJq9xnARBalEAwMQk8ZJL5YWYpNAiiCCtbuMcH3GkwbOz7uvRd5-XPyuWanaxOJxnm3BZi1FaQFOOrJFf_ktSRUYlKG3gp3_Ax2XNLa5iNFAKvOXeIDhCLi-lZAxmn-PO5icDxByaMc_NmEMz5thM03x-Mbal5R5agi6WV6FUFLTkjft45CIivr4Fo8AY-wsv7JiY</recordid><startdate>20060501</startdate><enddate>20060501</enddate><creator>Song, Seung-Hwan</creator><creator>Kim, Kyung Rok</creator><creator>Kang, Sangwoo</creator><creator>Kim, Jin Ho</creator><creator>Huh, Jung Im</creator><creator>Kang, Kwon Chil</creator><creator>Song, Ki-Whan</creator><creator>Lee, Jong Duk</creator><creator>Park, Byung-Gook</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The key operation principle of this quantum-tunneling device is the field-induced interband tunneling. To include the effect of interband tunneling, we have developed an analytical equation of interband tunneling current. Due to the inherent SOI-MOSFET structure of the FITET, the current equation of MOSFET has also been included in the analytical equation of the FITET. By comparing the calculated data from these two current components with the measured data, an additional excess tunneling current component has been introduced in the final analytical equation of the FITET. SPICE simulation results with this analytical model have shown good agreements with the experimental results. Also, this analytical model has been applied to verify the functionality of a simple digital logic gate such as XOR and four-level parity checker made by one FITET.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TNANO.2006.869950</doi><tpages>9</tpages></addata></record> |
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| ispartof | IEEE transactions on nanotechnology, 2006-05, Vol.5 (3), p.192-200 |
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| subjects | Analytical model Analytical models Applied sciences Circuit properties CMOS technology Degradation Devices Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Equations Exact sciences and technology field-induced interband tunneling-effect transistor (FITET) interband tunneling Logic Mathematical analysis Mathematical models Molecular electronics, nanoelectronics MOSFET circuits MOSFETs multivalued logic Nanoscale devices negative-differential conductance (NDC) negative-differential transconductance (NDT) parity checker Quantum mechanics Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SPICE Studies Transconductance Transistors Tunneling XOR |
| title | Analytical modeling of field-induced interband tunneling-effect transistors and its application |
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