Highly area efficient and cost effective double stacked S3(stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM
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| creator | JUNG, Soon-Moon LIM, Hoon KIM, Sungjin JEONG, Jaehun CHANG, Youngchul JANG, Jaehoon KIM, Jonghyuk KIM, Kinam RYU, Byung-Il CHO, Wonseok CHO, Hoosung YEO, Chadong YONGHA KANG BAE, Daegi NA, Jonghoon KWAK, Kunho CHOI, Bonghyun |
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| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_17806410</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>17806410</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_178064103</originalsourceid><addsrcrecordid>eNqNT8tqwzAQFJRCX_mHvQTSQ0CundTXEBpyMYXK96DIK3tbRTJataCf6bfWDe09c5kHw8BciTv5XMuyXtdVcSNmzO9yQrWqZF3eiu899YPLoCNqQGvJEPoE2ndgAqffCE2iL4QufB4dAidtPrADVS7-JZPvHS5NzFPiQNEjjBhpHDBOdtu8KlCq3bXnVfW2acCgc5DQDD640GewIcKqeGrgSAk69Ewpn5sP4tpqxzj743sx37202_1y1Gy0s1F7Q3wYI510zIdierquClle2vsBOkdbEQ</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Highly area efficient and cost effective double stacked S3(stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>JUNG, Soon-Moon ; LIM, Hoon ; KIM, Sungjin ; JEONG, Jaehun ; CHANG, Youngchul ; JANG, Jaehoon ; KIM, Jonghyuk ; KIM, Kinam ; RYU, Byung-Il ; CHO, Wonseok ; CHO, Hoosung ; YEO, Chadong ; YONGHA KANG ; BAE, Daegi ; NA, Jonghoon ; KWAK, Kunho ; CHOI, Bonghyun</creator><creatorcontrib>JUNG, Soon-Moon ; LIM, Hoon ; KIM, Sungjin ; JEONG, Jaehun ; CHANG, Youngchul ; JANG, Jaehoon ; KIM, Jonghyuk ; KIM, Kinam ; RYU, Byung-Il ; CHO, Wonseok ; CHO, Hoosung ; YEO, Chadong ; YONGHA KANG ; BAE, Daegi ; NA, Jonghoon ; KWAK, Kunho ; CHOI, Bonghyun</creatorcontrib><identifier>ISBN: 0780386841</identifier><identifier>ISBN: 9780780386846</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>2004 International Electron Devices Meeting, 2004, p.265-268</ispartof><rights>2006 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,776,780,785,786,4035,4036</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17806410$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JUNG, Soon-Moon</creatorcontrib><creatorcontrib>LIM, Hoon</creatorcontrib><creatorcontrib>KIM, Sungjin</creatorcontrib><creatorcontrib>JEONG, Jaehun</creatorcontrib><creatorcontrib>CHANG, Youngchul</creatorcontrib><creatorcontrib>JANG, Jaehoon</creatorcontrib><creatorcontrib>KIM, Jonghyuk</creatorcontrib><creatorcontrib>KIM, Kinam</creatorcontrib><creatorcontrib>RYU, Byung-Il</creatorcontrib><creatorcontrib>CHO, Wonseok</creatorcontrib><creatorcontrib>CHO, Hoosung</creatorcontrib><creatorcontrib>YEO, Chadong</creatorcontrib><creatorcontrib>YONGHA KANG</creatorcontrib><creatorcontrib>BAE, Daegi</creatorcontrib><creatorcontrib>NA, Jonghoon</creatorcontrib><creatorcontrib>KWAK, Kunho</creatorcontrib><creatorcontrib>CHOI, Bonghyun</creatorcontrib><title>Highly area efficient and cost effective double stacked S3(stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM</title><title>2004 International Electron Devices Meeting</title><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><isbn>0780386841</isbn><isbn>9780780386846</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqNT8tqwzAQFJRCX_mHvQTSQ0CundTXEBpyMYXK96DIK3tbRTJataCf6bfWDe09c5kHw8BciTv5XMuyXtdVcSNmzO9yQrWqZF3eiu899YPLoCNqQGvJEPoE2ndgAqffCE2iL4QufB4dAidtPrADVS7-JZPvHS5NzFPiQNEjjBhpHDBOdtu8KlCq3bXnVfW2acCgc5DQDD640GewIcKqeGrgSAk69Ewpn5sP4tpqxzj743sx37202_1y1Gy0s1F7Q3wYI510zIdierquClle2vsBOkdbEQ</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>JUNG, Soon-Moon</creator><creator>LIM, Hoon</creator><creator>KIM, Sungjin</creator><creator>JEONG, Jaehun</creator><creator>CHANG, Youngchul</creator><creator>JANG, Jaehoon</creator><creator>KIM, Jonghyuk</creator><creator>KIM, Kinam</creator><creator>RYU, Byung-Il</creator><creator>CHO, Wonseok</creator><creator>CHO, Hoosung</creator><creator>YEO, Chadong</creator><creator>YONGHA KANG</creator><creator>BAE, Daegi</creator><creator>NA, Jonghoon</creator><creator>KWAK, Kunho</creator><creator>CHOI, Bonghyun</creator><general>IEEE</general><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>Highly area efficient and cost effective double stacked S3(stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM</title><author>JUNG, Soon-Moon ; LIM, Hoon ; KIM, Sungjin ; JEONG, Jaehun ; CHANG, Youngchul ; JANG, Jaehoon ; KIM, Jonghyuk ; KIM, Kinam ; RYU, Byung-Il ; CHO, Wonseok ; CHO, Hoosung ; YEO, Chadong ; YONGHA KANG ; BAE, Daegi ; NA, Jonghoon ; KWAK, Kunho ; CHOI, Bonghyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_178064103</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>JUNG, Soon-Moon</creatorcontrib><creatorcontrib>LIM, Hoon</creatorcontrib><creatorcontrib>KIM, Sungjin</creatorcontrib><creatorcontrib>JEONG, Jaehun</creatorcontrib><creatorcontrib>CHANG, Youngchul</creatorcontrib><creatorcontrib>JANG, Jaehoon</creatorcontrib><creatorcontrib>KIM, Jonghyuk</creatorcontrib><creatorcontrib>KIM, Kinam</creatorcontrib><creatorcontrib>RYU, Byung-Il</creatorcontrib><creatorcontrib>CHO, Wonseok</creatorcontrib><creatorcontrib>CHO, Hoosung</creatorcontrib><creatorcontrib>YEO, Chadong</creatorcontrib><creatorcontrib>YONGHA KANG</creatorcontrib><creatorcontrib>BAE, Daegi</creatorcontrib><creatorcontrib>NA, Jonghoon</creatorcontrib><creatorcontrib>KWAK, Kunho</creatorcontrib><creatorcontrib>CHOI, Bonghyun</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JUNG, Soon-Moon</au><au>LIM, Hoon</au><au>KIM, Sungjin</au><au>JEONG, Jaehun</au><au>CHANG, Youngchul</au><au>JANG, Jaehoon</au><au>KIM, Jonghyuk</au><au>KIM, Kinam</au><au>RYU, Byung-Il</au><au>CHO, Wonseok</au><au>CHO, Hoosung</au><au>YEO, Chadong</au><au>YONGHA KANG</au><au>BAE, Daegi</au><au>NA, Jonghoon</au><au>KWAK, Kunho</au><au>CHOI, Bonghyun</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Highly area efficient and cost effective double stacked S3(stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM</atitle><btitle>2004 International Electron Devices Meeting</btitle><date>2004</date><risdate>2004</risdate><spage>265</spage><epage>268</epage><pages>265-268</pages><isbn>0780386841</isbn><isbn>9780780386846</isbn><cop>Piscataway NJ</cop><pub>IEEE</pub></addata></record> |
| fulltext | fulltext |
| identifier | ISBN: 0780386841 |
| ispartof | 2004 International Electron Devices Meeting, 2004, p.265-268 |
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| language | eng |
| recordid | cdi_pascalfrancis_primary_17806410 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Highly area efficient and cost effective double stacked S3(stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T06%3A11%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Highly%20area%20efficient%20and%20cost%20effective%20double%20stacked%20S3(stacked%20single-crystal%20Si)%20peripheral%20CMOS%20SSTFT%20and%20SRAM%20cell%20technology%20for%20512M%20bit%20density%20SRAM&rft.btitle=2004%20International%20Electron%20Devices%20Meeting&rft.au=JUNG,%20Soon-Moon&rft.date=2004&rft.spage=265&rft.epage=268&rft.pages=265-268&rft.isbn=0780386841&rft.isbn_list=9780780386846&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E17806410%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |