A low-temperature Si/SiGe impact diode for improved infrared sensing

Si/SiGe quantum well (QW) impact diodes are demonstrated with multiplication up to 200 at 10 V reverse bias between 10-150 K. These diodes are ideal gain structures for use with Si impurity band conduction (IBC) infrared detectors, due to the available integration platform, appropriate low temperatu...

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Bibliographische Detailangaben
Hauptverfasser:	Meteer, J.A., Eikenberry, S.S., Huffman, J.E., Kan, E.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Astronomy Compound structure devices Diodes Electronics Electrons Exact sciences and technology Germanium silicon alloys Infrared detectors Optoelectronic devices P-i-n diodes Photoconductivity Semiconductor device noise Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Temperature
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Beschreibung
Zusammenfassung:	Si/SiGe quantum well (QW) impact diodes are demonstrated with multiplication up to 200 at 10 V reverse bias between 10-150 K. These diodes are ideal gain structures for use with Si impurity band conduction (IBC) infrared detectors, due to the available integration platform, appropriate low temperature characteristics, low voltage operation, and low noise multiplication mechanism as required for compatibility with mid- and far infrared detection. Physical characterization, including composition and doping profiles, are obtained from STEM and SIMS analyses. Photocurrent multiplication is measured to confirm our device design.
ISSN:	1548-3770 2640-6853
DOI:	10.1109/DRC.2004.1367847