$Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data: Special issue on high resolution x-ray diffraction and topography$

Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data: Special issue on high resolution x-ray diffraction and topography

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 1999, Vol.32 (10A), p.A56-A60
Hauptverfasser:	SCHUSTER, M, GERVAIS, P. O, JOBST, B, HÖSLER, W, AVERBECK, R, RIECHERT, H, IBERI, A, STÖMMER, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition and phase identification Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
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ISSN:	0022-3727 1361-6463