Detailed observation of small leak current in flash memories with thin tunnel oxides

Detailed observation of small leak current in flash memories with thin tunnel oxides

This paper describes a method for measuring the small current through the oxides on the order of 10/sup -20/ A or less using a floating gate MOSFET and the application results on flash memories with thin tunnel oxides. The method is based on an accurate measurement of the threshold voltage of a floa...

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Veröffentlicht in:IEEE transactions on semiconductor manufacturing 1999-05, Vol.12 (2), p.170-174
Hauptverfasser: Manabe, Y., Okuyama, K., Kubota, K., Nozoe, A., Karashima, T., Ujiie, K., Kanno, H., Nakashima, M., Ajika, N.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitance
Capacitors
Current measurement
Design. Technologies. Operation analysis. Testing
Dielectric measurements
Electronics
Exact sciences and technology
Flash memory
Flash memory (computers)
Flash memory cells
Gates
Integrated circuits
Leaks
MOSFET circuits
MOSFETs
Nonvolatile memory
Oxides
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Threshold voltage
Tunnels (transportation)
Voltage measurement
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Beschreibung
Zusammenfassung:This paper describes a method for measuring the small current through the oxides on the order of 10/sup -20/ A or less using a floating gate MOSFET and the application results on flash memories with thin tunnel oxides. The method is based on an accurate measurement of the threshold voltage of a floating gate MOSFET with no charge in the floating gate. We applied this method to flash memories to investigate the leak current behavior through thin tunnel oxides with very small areas (
ISSN:0894-6507
1558-2345
DOI:10.1109/66.762874