Physically based quantum-mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1 nm) SiO2 and high-κ gate stacks

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2006, Vol.53 (5), p.1096-1106
Hauptverfasser:	FEI LI, MUDANAI, Sivakumar P, FAN, Yang-Yu, REGISTER, Leonard Franklin, BANERJEE, Sanjay K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Electronics Exact sciences and technology Molecular electronics, nanoelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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