The comparison of modern SiC power devices

A comparative study on high voltage MOSFET and IGBT devices (internal cell electrical characteristics) demonstrate the similarity of both devices. This paper presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for V/sub GS/...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Avram, M., Brezeanu, G., Poenar, D.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Computer science control theory systems Conductivity Exact sciences and technology Insulated gate bipolar transistors MOSFET circuits Power dissipation Power MOSFET Semiconductor materials Silicon carbide Substrates Voltage
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